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Absolute doubly differential angular sputtering yields for 20 keV Kr+ on polycrystalline Cu

Bu, Caixia; Morrissey, Liam S.; Bostick, Benjamin C.; Burger, Matthew H.; Bowen, Kyle P.; Chillrud, Steven N.; Domingue, Deborah; Dukes, Catherine A.; Ebel, Denton S.; Harlow, George E.; Hillenbrand, Pierre-Michel; Ivanov, Dmitry; Killen, Rosemary M.; Ross, James M.; Schury, Daniel; Tucker, Orenthal J.; Urbain, Xavier; Zhang, Ruitian; Savin, Daniel Wolf

We have measured the absolute doubly differential angular sputtering yield for 20 keV Kr⁺ impacting a polycrystalline Cu slab at an incidence angle of θiᵢ= 45° relative to the surface normal. Sputtered Cu atoms were captured using collectors mounted on a half dome above the sample, and the sputtering distribution was measured as a function of the sputtering polar, θₛ, and azimuthal, ϕₛ, angles. Absolute results of the sputtering yield were determined from the mass gain of each collector, the ion dose, and the solid angle subtended, after irradiation to a total fluence of ∼1 × 10¹⁸ ions/cm². Our approach overcomes shortcomings of commonly used methods that only provide relative yields as a function of θₛ in the incidence plane (defined by the ion velocity and the surface normal). Our experimental results display an azimuthal variation that increases with increasing θₛ and is clearly discrepant with simulations using binary collision theory. We attribute the observed azimuthal anisotropy to ion-induced formation of micro- and nano-scale surface features that suppress the sputtering yield through shadowing and redeposition effects, neither of which are accounted for in the simulations. Our experimental results demonstrate the importance of doubly differential angular sputtering studies to probe ion sputtering processes at a fundamental level and to explore the effect of ion-beam-generated surface roughness.

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Also Published In

Title
Journal of Applied Physics
DOI
https://doi.org/10.1063/5.0184417

More About This Work

Academic Units
Astrophysics Laboratory
Published Here
March 12, 2026