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Absolute rate coefficients for photorecombination of berylliumlike and boronlike silicon ions

Bernhardt, D.; Becker, A.; Brandau, C.; Grieser, M.; Hahn, Michael; Krantz, C.; Lestinsky, M.; Novotny, Oldrich; Repnow, R.; Savin, Daniel Wolf; Spruck, K.; Wolf, A.; Muller, A.; Schippers, S.

We report measured rate coefficients for electron–ion recombination of Si10+ forming Si9+ and of Si9+ forming Si8+, respectively. The measurements were performed using the electron–ion merged-beams technique at a heavy-ion storage ring. Electron–ion collision energies ranged from 0 to 50 eV for Si9+ and from 0 to 2000 eV for Si10+, thus, extending previous measurements for Si10+ (Orban et al 2010 Astrophys. J. 721 1603) to much higher energies. Experimentally derived rate coefficients for the recombination of Si9+ and Si10+ ions in a plasma are presented along with simple parameterizations. These rate coefficients are useful for the modeling of the charge balance of silicon in photoionized plasmas (Si9+ and Si10+) and in collisionally ionized plasmas (Si10+ only). In the corresponding temperature ranges, the experimentally derived rate coefficients agree with the latest corresponding theoretical results within the experimental uncertainties.


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Journal of Physics B: Atomic, Molecular and Optical Physics

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Astrophysics Laboratory
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September 6, 2017