2016 Articles
Absolute rate coefficients for photorecombination of berylliumlike and boronlike silicon ions
We report measured rate coefficients for electron–ion recombination of Si10+ forming Si9+ and of Si9+ forming Si8+, respectively. The measurements were performed using the electron–ion merged-beams technique at a heavy-ion storage ring. Electron–ion collision energies ranged from 0 to 50 eV for Si9+ and from 0 to 2000 eV for Si10+, thus, extending previous measurements for Si10+ (Orban et al 2010 Astrophys. J. 721 1603) to much higher energies. Experimentally derived rate coefficients for the recombination of Si9+ and Si10+ ions in a plasma are presented along with simple parameterizations. These rate coefficients are useful for the modeling of the charge balance of silicon in photoionized plasmas (Si9+ and Si10+) and in collisionally ionized plasmas (Si10+ only). In the corresponding temperature ranges, the experimentally derived rate coefficients agree with the latest corresponding theoretical results within the experimental uncertainties.
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Also Published In
- Title
- Journal of Physics B: Atomic, Molecular and Optical Physics
- DOI
- https://doi.org/10.1088/0953-4075/49/7/074004
More About This Work
- Academic Units
- Astrophysics Laboratory
- Published Here
- September 6, 2017