Academic Commons

Articles

Double Exposure Materials: Simulation Study of Feasibility

Byers, Jeffrey; Lee, Saul; Jen, Kane; Zimmerman, Paul; Turro, Nicholas J.; Willson, C. Grant

Double patterning and double exposure techniques have been proposed as possible methods for reducing half pitch resolution below k1=0.25. Both methods have the potential to reduce the theoretical lithographic half pitch to k1=0.125. Double patterning is a process-intensive method that requires multiple coat, develop, and etch steps to achieve the low k1 imaging. Double exposure processes have been proposed that do not require multiple coat, develop, or etch steps. Potentially, double exposure processes will have a lower cost of ownership that double patterning. However, double exposure materials have not yet been proven to work experimentally. Before applying significant effort to develop double exposure materials, their feasibility can be determined using rigorous simulation techniques. This work presents a feasibility study of four types of double exposure materials and their potential process windows.

Files

Also Published In

Title
Journal of Photopolymer Science and Technology

More About This Work

Academic Units
Chemistry
Published Here
July 22, 2010
Academic Commons provides global access to research and scholarship produced at Columbia University, Barnard College, Teachers College, Union Theological Seminary and Jewish Theological Seminary. Academic Commons is managed by the Columbia University Libraries.