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An analysis of double exposure lithography options

Saul Lee; Jeffrey Byers; Kane Jen; Paul Zimmerman; Bryan Rice; Nicholas J. Turro; C. Grant Willson

Title:
An analysis of double exposure lithography options
Author(s):
Lee, Saul
Byers, Jeffrey
Jen, Kane
Zimmerman, Paul
Rice, Bryan
Turro, Nicholas J.
Willson, C. Grant
Date:
Type:
Articles
Department:
Chemistry
Volume:
6924
Permanent URL:
Book/Journal Title:
Proceedings of SPIE
Abstract:
The current optical photolithography technology is approaching the physical barrier to the minimum achievable feature size. To produce smaller devices, new resolution enhancement technologies must be developed. Double exposure lithography has shown promise as potential pathway that is attractive because it is much cheaper than double patterning lithography and it can be deployed on existing imaging tools. However, this technology is not possible without the development of new materials with nonlinear response to exposure dose. The performance of existing materials such as reversible contrast enhancement layers (rCELs) and theoretical materials such as intermediate state two-photon (ISTP) and optical threshold layer (OTL) materials in double exposure applications was investigated through computer simulation. All three materials yielded process windows in double exposure mode. OTL materials showed the largest process window (DOF 0.137 µm, EL 5.06 %). ISTP materials had the next largest process window (DOF 0.124 µm, EL 3.22 %) followed by the rCEL (0.105 µm, 0.58 %). This study is an analysis of the feasibility of using the materials in double exposure mode.
Subject(s):
Chemistry
Publisher DOI:
10.1117/12.773030
Item views:
368
Metadata:
text | xml

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